〇 Support high-voltage and high-current testing of power semiconductor including SiC and GaN device
〇 Puncture voltage 10kV
〇 High Current up to 1200A
〇 Vacuum < 1E-4Torr
〇 Temperature range: -55℃~300℃ (customizable)
〇 Optional high-voltage and high-current probes
〇 Optional end-to-end testing solution services
〇 High-vacuum low-deformation chamber design
〇 Customizable manual, semi-automatic, and fully automatic solutions