High Power Wafer Prober System
WAT-226

WAT-226 high power wafer prober system adopts a closed cavity form and is mainly used in power semiconductor wafer level testing such as SiC, GaN and Si IGBT. The probe station integrates moving components, heating components, cooling components, prober station, and wafer chucks in a closed cavity to build a safe and stable wafer level testing environ_x0002_ment. The prober station meets special testing requirements under extreme conditions such as high temperature, low temperature, high voltage, and high current. It also protects the devices from physical damage and contamination, including oxidation, condensation, frost formation, and electrical arc breakdown.

Product Features

〇    Support high-voltage and high-current testing of power semiconductor including SiC and GaN device

〇    Puncture voltage 10kV

〇    High Current up to 1200A

〇    Vacuum < 1E-4Torr

〇    Temperature range: -55℃~300℃ (customizable)

〇    Optional high-voltage and high-current probes

〇    Optional end-to-end testing solution services

〇    High-vacuum low-deformation chamber design

〇    Customizable manual, semi-automatic, and fully automatic solutions


Product Application

High power wafer prober system

Technical Specifications

Product Features

Product Application

Technical Specifications

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